To obtain this phenomenon supply voltage has to be minimal along with an acceptable on/off current ratio.ĭue to small intrinsic behaviour and size CNT has a considerable advantages. In the field of CMOS technology, power constrained environment can be acquainted by low switching energy per logic Since this device employs metal as its source/drain terminals and has Schottkyīarrier at its terminal contact between nanotube and metal, therefore it is called Schottky-barrier CNFET (SB-CNFET). SB is also extremely sensitive to changes of local environment at the contact. The SB is controlled by the difference of the local work functions of the metal and the carbon nanotube. These states become available in the energy gap of semiconductor due to interface formed The barrier height is determined by the filling of Normally, a potential barrier known as Schottkyīarrier (SB) exists at every contact between metal and semiconductor. This paper details with SB CNTFET structures. With metallic electrodes which form Schottky contacts and MOSFET-like CNTFETs with doped CNT electrodes whichįorm Ohmic contacts. CNTFETs are mainly divided into Schottky barrier CNTFETs (SB CNTFETs) For modelling a CNTFET, mesoscopic physics analysis gives differentĪccepts of CNTFET and their structures. This finding of SWNT is more important since the structure is more fundamental and became theīasis for theoretical studies of large bodies. Single-walled carbon nanotube(SWCNT) was discovered by Iijima, and his group throughĮxperiment work. In other words, current is actually flowing from drain to source Just like MOSFET it supplies electronsįrom source terminal to drain terminal from collection. The motivation of research in CNFET is fuelled by the unique electricalĬharacteristics of carbon nanotube especially the semiconducting characteristic. Nanotube field effect transistor (CNTFET).
One of the most imaging features of carbon nanotube is its application on electronics field especially in Carbon
KeywordsĬNTFET, CNT diameter, oxide thickness, on-off current ratio. In this way an optimum values of gate insulator thickness and diameter of the nano tube are identified to offer highest on/off current ratio of the device. Also the simulation results show that the variance of insulator thickness on the threshold voltage, has no effect on the off-state current. On the other hand, the off-state current improves in CNTFETs with thinner gate oxide. With a large CNT diameter and thinner gate oxide enhanced onstate current can be profound. This paper deals with the changes of the gate insulator thickness and diameter of the nano tube on the carbon nano tube field effect transistor (CNTFET).
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